N
O
T RE
CO
MMENDED F
O
R NEW DE
S
I
G
N
NOT RECOMMENDED FOR NEW DESIGN
MRF373ALR1 MRF373ALSR1
1
Freescale Semiconductor
RF Product Device Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
?
Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power ? 75 Watts
Power Gain ? 18.2 dB
Efficiency ? 60%
?
Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz,
75 Watts CW Output Power
Features
?
Integrated ESD Protection
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large-Signal
Impedance Parameters
?
Low Gold Plating Thickness on Leads.
L Suffix Indicates 40μ″ Nominal.
?
RoHS Compliant
?
In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +70
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC
= 25
°C MRF373ALR1
Derate above 25°C
MRF373ALSR1
PD
197
1.12
278
1.59
W
W/°C
W
W/°C
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case MRF373ALR1
MRF373ALSR1
RθJC
0.89
0.63
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model MRF373ALR1
MRF373ALSR1
M2 (Minimum)
M1 (Minimum)
Document Number: MRF373A
Rev. 7, 9/2008
Freescale Semiconductor
Technical Data
470-860 MHz, 75 W, 32 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B-05, STYLE 1
NI-360
MRF373ALR1
CASE 360C-05, STYLE 1
NI-360S
MRF373ALSR1
MRF373ALR1
MRF373ALSR1
G
D
S
?
Freescale Semiconductor, Inc., 2008. All rights reserved.
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF374A
IC MOSFET RF N-CHAN NI-650
MRF377HR3
MOSFET RF N-CHAN 32V 45W NI-860C
MRF5P20180HR6
MOSFET RF N-CHAN 28V 38W NI-1230
MRF5P21045NR1
MOSFET RF N-CH TO-270-4
MRF5P21180HR6
MOSFET RF N-CHAN 28V 38W NI-1230
MRF5P21240HR6
MOSFET RF N-CHAN 28V 52W NI-1230
MRF5S19060MR1
MOSFET RF N-CH 28V 12W TO-270-4
MRF5S19060NBR1
MOSFET N-CH 12W 28V TO-272-4
相关代理商/技术参数
MRF373AR1
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF373ASR1
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF373R1
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF373S
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF373SR1
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF374
制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR
MRF374A
功能描述:射频MOSFET电源晶体管 RF POWER LDMOS U650 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF374A_06
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors